®
STP80NF55-06 STP80NF55-06FP
N - CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP STripFET™ POWER MOSFET
PRELIMINARY DATA T...
®
STP80NF55-06 STP80NF55-06FP
N - CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STP80NF55-06 STP80NF55-06FP
s s s s
V DSS 55 V 55 V
R DS(on) < 0.0065 Ω < 0.0065 Ω
ID 80 A 60 A
TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
3 1 2
3 1 2
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™ ” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STP80NF55-06 V DS V DGR V GS ID ID I DM ( ) P tot V ISO dv/dt Ts tg Tj July 1999 Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Unit
STP55NF 55-06FP 55 55 ± 20 V V V 60 42 240 50 0.33 2000 7 A A A W W/ oC V V/ns
o o
80 57 320 210 1.43 -65 to 175 175
C C 1/6
() Pu...