SDT10S60

SDT10S60 Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark www.DataSheet4U.com thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 29 10 P-TO220-2-2. V nC A No reverse recovery No temperature influence on the switching behavior No forward recovery Type SDT10S60 Package P-TO220-2-2. Ordering Code Q67040S4643 Marking D10S60 Pin 1 Pin 2 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 10 14.1 31 39 100 4.8 600 600 75 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.0 Page 1 2004-03-18 SDT10S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - ambient, leaded RthJC RthJA 2 62 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C Symbol min. VF IR - ...