Preliminary data
SDP10S30, SDB10S30 SDT10S30
Silicon Carbide Schottky Diode
Revolutionary semiconductor
material - ...
Preliminary data
SDP10S30, SDB10S30 SDT10S30
Silicon Carbide
Schottky Diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark No reverse recovery
www.DataSheet4U.com
Product Summary V VRRM 300 Qc IF
P-TO220-2-2. P-TO220-3.SMD
23 10
P-TO220-3-1.
nC A
No temperature influence on
the switching behavior
No forward recovery
Type SDP10S30 SDB10S30 SDT10S30
Package P-TO220-3-1. P-TO220-2-2.
Ordering Code Q67040-S4372 Q67040-S4447
Marking D10S30 D10S30 D10S30
Pin 1 n.c. n.c.
PIN 2 C C
PIN 3 A A
P-TO220-3.SMD Q67040-S4373
C
Value 10 14 36 45 100 6.5 300 300 65
A
Unit A
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp =10ms
Symbol IF IFRMS
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM IFMAX
2
Non repetitive peak forward current
tp =10µs, TC=25°C
i 2 t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
i dt
A²s V W °C
VRRM VRSM Ptot Tj , Tstg
-55... +175
Page 1
2001-12-04
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, www.DataSheet4U.com device on PCB:
P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 1)
SDP10S30, SDB10S30 SDT10S30
Values min. typ. 35 max. 2.3 62 K/W Unit...