SDT10S30

Preliminary data SDP10S30, SDB10S30 SDT10S30 Silicon Carbide Schottky Diode
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark
No reverse recovery www.DataSheet4U.com Product Summary V VRRM 300 Qc IF P-TO220-2-2. P-TO220-3.SMD 23 10 P-TO220-3-1. nC A
No temperature influence on the switching behavior
No forward recovery Type SDP10S30 SDB10S30 SDT10S30 Package P-TO220-3-1. P-TO220-2-2. Ordering Code Q67040-S4372 Q67040-S4447 Marking D10S30 D10S30 D10S30 Pin 1 n.c. n.c. PIN 2 C C PIN 3 A A P-TO220-3.SMD Q67040-S4373 C Value 10 14 36 45 100 6.5 300 300 65 A Unit A Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp =10ms Symbol IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX
2 Non repetitive peak forward current tp =10µs, TC=25°C i 2 t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature i dt A²s V W °C VRRM VRSM Ptot Tj , Tstg -55... +175 Page 1 2001-12-04 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, www.DataSheet4U.com device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 1) SDP10S30, SDB10S30 SDT10S30 Values min. typ. 35 max. 2.3 62 K/W Unit...