SPU09N05

SPD 09N05 SIPMOS® Power Transistor Features N channel Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated Avalanche rated www.DataSheet4U.com dv/dt 175˚C operating temperature Type SPD09N05 SPU09N05 Package P-TO252 P-TO251 Ordering Code Q67040-S4136 Packaging Tape and Reel Pin 1 G Pin 2 D Pin 3 S Q67040-S4130-A2 Tube MaximumRatings , at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current Value 9.2 6.5 37 35 2.4 6 ±20 24 -55... +175 55/175/56 Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse mJ ID = 9.2 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs V W ˚C IS = 9.2 A, VDS = 40 V, di/dt = 200 A/µs Gate source voltage Power dissipation VGS Ptot Tj , Tstg TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 06.99 SPD 09N05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case www.DataSheet4U.com Symbol min. Values typ. max. 6.25 100 75 50 Unit RthJC RthJA RthJA - K/W Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol...