SPU07N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO-251 and TO-252 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPU07N60S5 SPD07N60S5 VDS RDS(on) ID PG-TO252 600 V 0.6 Ω 7.3 A PG-TO251 2 3 1 3 2 1 Type SPU07N60S5 SPD07N60S5 Package PG-TO251 PG-TO252 Ordering Code Q67040-S4196 Q67040-S4186 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = - A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Ptot Operating and storage temperature Tj , Tstg Value 7.3 4.6 14.6 230 0.5 7.3 ±20 ±30 83 -55... +150 Unit A mJ A V W °C Rev. 2.6 Page 1 2013-05­10 SPU07N60S5 SPD07N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Symbol dv/dt Value 20 Unit V/ns Symbol RthJC RthJA RthJA Tsold Values ...