Silicon N-Channel Power MOSFET
HAT2191WP
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance • Low drive current • High densit...
Description
HAT2191WP
Silicon N Channel Power MOS FET Power Switching
Features
Low on-resistance Low drive current High density mounting
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 678 D DDD
5 678 4 G
4 32 1
S SS 1 23
REJ03G1223-0500 Rev.5.00
Jun.02.2005
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings 250 ±30 14 28 14 28 7 3.0 30 4.17 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A A mJ W
°C/W °C °C
Rev.5.00, Jun.02.2005, page 1 of 3
HAT2191WP
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
250
Zero gate voltage drain current
IDSS
—
Gate to source leak current
IGSS
—
Gate to source cutoff voltage
VGS(off)
3.0
Forward transfer admittance
|yfs|
7
Static drain to source on state resistance
RDS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall ti...
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