HAT2092R

HAT2092R Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive Low drive current High density mounting Outline SOP-8 8 7 65 1 234 78 DD 2 4 G G S1 MOS1 56 DD S3 MOS2 REJ03G0511-0300 (Previous ADE-208-1236A(Z)) Rev.3.00 Jan.13.2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 ID(pulse)Note1 88 Body–drain diode reverse drain current IDR 11 Channel dissipation Pch Note2 2 Channel dissipation Pch Note3 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s (Ta = 25°C) Unit V V A A A W W °C °C Rev.3.00 Jan. 13, 2005 page 1 of 7 HAT2092R Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 30 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 1.0 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 12 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Tota...