Silicon N-Channel MOSFET
HAT2087R
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High d...
Description
HAT2087R
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance Low drive current High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65 1234
4 G
5678 DDDD
SSS 123
REJ03G1182-0300 Rev.3.00
Feb 06, 2009
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
VDSS
250
Gate to source voltage
VGSS
±30
Drain current Drain peak current
ID ID (pulse) Note 1
2.5 20
Body to drain diode reverse drain current Channel dissipation
IDR Pch Note 2
2.5 2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit V V A A A W °C °C
REJ03G1182-0300 Feb 06, 2009 Page 1 of 6
HAT2087R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage Gate to source leak current
V (BR) DSS
250
—
—
IGSS — — ±0.1
Zero gate voltage drain current
IDSS
——
1
Gate to source cutoff voltage
VGS (off)
3.0
—
4.5
Static drain to source on state resistance RDS (on)
— 0.24 0.31
Forward transfer admittance
|yfs|
2.1 3.5
—
Input capacitance
Ciss — 830 —
Output capacitance
Coss
— 105 —
Reverse transfer capacitance
Crss
— 21 —
V ID = 10 mA, VGS = 0 µA VGS = ±30 V, VDS = 0 µA VDS = 250 V, VGS = 0 V ID = 1 mA, VDS = 10 V Ω ID = 1.25 A, VGS = 10...
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