HAT2080R Datasheet PDF - Renesas Technology

HAT2080R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High d...

HAT2080R Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 5678 DDDD SSS 123 REJ03G1180-0200 (Previous: ADE-208-1229) Rev.2.00 Sep 07, 2005 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.2.00 Sep 07, 2005 page 1 of 3 HAT2080R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 250 VGSS ±30 Drain current Drain peak current ID ID (pulse) Note 1 1.7 13.6 Body to drain diode reverse drain current IDR 1.7 Channel dissipation Pch Note 2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance V (BR) DSS 250 — — IGSS — — ±0.1 IDSS — — 1 VGS (off) 3.0 — 4.0 RDS (on) — 0.65 0.85 |yfs| 1.2 2.0 — Ciss — 300 — Coss — 42 — Crss — 11 — V ID = 10 mA, VGS = 0 µA VGS = ±30 V, VDS = 0 µA VDS = 250 V, VGS = 0 V ID = 1 mA, VDS =...