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HAT1139H

Renesas Technology
Part Number HAT1139H
Manufacturer Renesas Technology
Description Silicon P-Channel Power MOSFET
Published Nov 20, 2008
Detailed Description HAT1139H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • ...
Datasheet PDF File HAT1139H PDF File

HAT1139H
HAT1139H

Overview
HAT1139H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.
0 mΩ typ.
(at VGS = –10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 5 5 D D 1 234 2 3 G G S S 1 4 REJ03G1244-0200 Rev.
2.
00 Jun.
22.
2005 1, 4 Source 2, 3 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
1 Drive operation : Tc = 25°C 3.
2 Drive operati...


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