HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0406-0100 Rev.1.00 Sep.10.2004
Features
Low on-resistance Capable of 4.5 V gate drive www.DataSheet4U.com High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating
Outline
SOP-8
7 8 D D 5 6 D D 5 7 6
2 G
4 G
...
