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HAT1111C
Silicon P-Channel Power MOSFET
Description
HAT1111C Silicon P Channel MOS FET Power Switching REJ03G0446-0600 Rev.6.00 May 19.2005 Features Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) www.DataSheet4U.com Low drive current. 4.5 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1 2 3 4 5 DDD D...
Renesas Technology
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