Silicon P-Channel Power MOSFET
HAT1110R
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • ...
Description
HAT1110R
Silicon P Channel Power MOS FET Power Switching
Features
Capable of –4.5 V gate drive Low drive current High density mounting
Outline
SOP-8
78
56
DD
DD
2
4
G
G
S1
MOS1
S3
MOS2
8 7 65 1 234
REJ03G0416-0200 Rev.2.00
Oct.07.2004
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
–80
Gate to source voltage
VGSS
±20
Drain current Drain peak current
ID
–1
ID(pulse)Note1
–6
Reverse drain current Channel dissipation Channel dissipation
IDR
–1
Pch Note2
1.2
Pch Note3
1.8
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit V V A A A W W °C °C
Rev.2.00, Oct.07.2004, page 1 of 7
HAT1110R
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test
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