HAT1094C

HAT1094C Silicon P Channel MOS FET Power Switching REJ03G1231-0400 Rev.4.00 Feb 28, 2006 Features Low on-resistance RDS(on) = 67 mΩ typ. (at VGS = –4.5 V) www.DataSheet4U.com Low drive current. 1.8 V gate drive devices. High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to Source voltage VDSS –12 Gate to Source voltage VGSS ±8 Drain current ID –2.5 Drain peak current ID (pulse)Note1 –10 Body - Drain diode reverse drain current IDR –2.5 Channel dissipation PchNote 2 850 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C Unit V V A A A mW °C °C Rev.4.00 Feb 28, 2006 page 1 of 6 HAT1094C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Min. –12 ±8 — — –0.3 — — — 3.5 — — — — — — — — — — — Typ. — — — — — 67 90 128 5 530 130 95 6.5 1 1.8 12 52 62 9 –0.85 Max. — — ±10 –1 –1.2 88 126 192 — — — — — — — — — — — –1.1 Unit V V µA µA V mΩ mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = –10 mA, VGS = 0 IG ...