H7N0602AB

H7N0602AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0068-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com Features Low on-resistance RDS(on) = 4.1 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N0602AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 85 340 85 65 362 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.2.00, Oct.30.2003, page 2 of 9 H7N0602AB Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ — — — — — 4.1 6.2 120 9000 1000 470 140 30 30 55 290 140 50 0.95 45 Max — — ±10 10 2.5 5.2 9.0 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns IF = 85 A, VGS = 0 IF = 85 A, VGS = 0 diF/dt = 100 A/µs Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 VNote1 ID = 45 A, VGS = 10 VNote1 ID = 45 A, VGS = 4.5 VNote1 ID = 45 A, VGS = 10 VNote1 VDS = 10 V VGS = 0 f =...