H7N0405LM

H7N0405LD, H7N0405LS, H7N0405LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1367-0100 Rev.1.00 Sep 25, 2006 Features Low on-resistance RDS(on) = 4.0 mΩ typ. www.DataSheet4U.com Low drive current. Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 2 1. Gate 2. Drain 3. Source 4. Drain 3 H7N0405LD H7N0405LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0405LM Rev.1.00 Sep 25, 2006 page 1 of 7 H7N0405LD, H7N0405LS, H7N0405LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 PchNote2 Tch Tstg Rating 40 ±20 80 320 80 40 213 80 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source break down voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cut off voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer admittance Total gate charge Gate to s...