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H7N0311LS Dataheets PDF



Part Number H7N0311LS
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon N-Channel MOSFET
Datasheet H7N0311LS DatasheetH7N0311LS Datasheet (PDF)

H7N0311LD, H7N0311LS, H7N0311LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1126-0500 (Previous: ADE-208-1423C) Rev.5.00 Apr 07, 2006 Features www.DataSheet4U.com R • Low on-resistance DS (on) = 7.0 mΩ typ. • Low drive current Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 1 3 2 3 H7N0311LD H7N0311LS RENESAS Package code: PRSS0004AE-C (P.

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H7N0311LD, H7N0311LS, H7N0311LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1126-0500 (Previous: ADE-208-1423C) Rev.5.00 Apr 07, 2006 Features www.DataSheet4U.com R • Low on-resistance DS (on) = 7.0 mΩ typ. • Low drive current Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 2 1 3 2 3 H7N0311LD H7N0311LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N0311LM Rev.5.00 Apr 07, 2006 page 1 of 7 H7N0311LD, H7N0311LS, H7N0311LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature www.DataSheet4U.com Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 30 ±20 45 180 45 60 2.08 150 –55 to +150 Unit V V A A A W °C/W °C °C Pch θ ch-c Tch Tstg Note 2 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 30 ±20 — — 1.0 — — 27 — — — — — — — — — — — — Typ — — — — — 7.0 11 45 1650 440 250 28 6.0 5.4 22 310 50 16 0.93 40 Max — — ±10 10 2.5 8.8 16 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 3 ID = 22.5 A, VGS = 10 V ID = 22.5 A, VGS = 5 V Note 3 ID = 22.5 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 45 A VGS = 10 V, ID = 22.5 A RL = 0.44 Ω Rg = 4.7 Ω IF = 45 A, VGS = 0 IF = 45 A, VGS = 0 diF/dt = 50 A/µs Note 3 Note 3 Rev.5.00 Apr 07, 2006 page 2 of 7 H7N0311LD, H7N0311LS, H7N0311LM Main Characteristics Power vs. Temperature Derating 80 500 Maximum Safe Operation Area 10 µs Pch (W) (A) 100 1m 60 s 100 ID Channel Dissipation 10 DC µs Op er 40 Drain Current ati PW on = 10 1 20 Operation in this area is limited by RDS (on) Tc = 25°C 1 shot Pulse 0.3 1 3 ms 0.1 www.DataSheet4U.com 0 0 50 100 150 200 0.01 0.1 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 6V 40 50 4V Pulse Test 3.5 V Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) ID (A) Drain Current 40 30 30 Drain Current 20 VGS = 3 V 10 20 Tc = 75°C 10 25°C –25°C 0 0 2 4 6 8 10 0 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) 1.0 Pulse Test 0.8 Drain to Source On State Resistance RDS(on) (mΩ) 100 Pulse Test 50 0.6 20 10 5 VGS = 5 V 0.4 ID = 50 A 10 V 0.2 20 A 10 A 2 1 0.1 0.2 0.5 1 0 0 4 8 12 16 20 2 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.5.00 Apr 07, 2006 page 3 of 7 H7N0311LD, H7N0311LS, H7N0311LM Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 40 Pulse Test 32 100 30 10 25°C 3 1 0.3 0.1 0.1 Tc = –25°C 75°C Static Drain to Source on State Resistance RDS(on) (mΩ) Forward Transfer Admittance vs. Drain Current 24 ID = 5 A, 10 A 16 VGS = 5 V ID = 20 A 8 10 V 0 –40 0 40 5 A, 10 A, 20 A 80 120 160 www.DataSheet4U.com VDS = 10 V Pulse Test 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 Coss 300 100 30 10 Crss Body to Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1000 500 200 100 50 20 10 0.1 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 Capacitance C (pF) Ciss VGS = 0 f = 1 MHz 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics (V) ID = 45 A 40 VDD = 25 V 10 V 5V Switching Characteristics VGS (V) 20 500 tr td(off) 50 VGS VDS Switching Time t (ns) 16 200 100 50 td(on) 20 10 5 0.1 0.2 0.5 1 tf Drain to Source Voltage 30 VDS 12 20 8 10 0 0 8 16 VDD = 25 V 10 V 5V 24 32 40 4 Gate to Source Voltage 0 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 2 5 10 20 50 100 Gate Charge Qg (nc) Drain.


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