Document
H7N0311LD, H7N0311LS, H7N0311LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1126-0500 (Previous: ADE-208-1423C) Rev.5.00 Apr 07, 2006
Features
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• Low on-resistance DS (on) = 7.0 mΩ typ. • Low drive current
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
4
1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1
2
1
3
2
3
H7N0311LD
H7N0311LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4
G
D
1
2
3
S
H7N0311LM
Rev.5.00 Apr 07, 2006 page 1 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature
www.DataSheet4U.com Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 30 ±20 45 180 45 60 2.08 150 –55 to +150
Unit V V A A A W °C/W °C °C
Pch θ ch-c Tch Tstg
Note 2
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 30 ±20 — — 1.0 — — 27 — — — — — — — — — — — — Typ — — — — — 7.0 11 45 1650 440 250 28 6.0 5.4 22 310 50 16 0.93 40 Max — — ±10 10 2.5 8.8 16 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 3 ID = 22.5 A, VGS = 10 V ID = 22.5 A, VGS = 5 V Note 3 ID = 22.5 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 45 A VGS = 10 V, ID = 22.5 A RL = 0.44 Ω Rg = 4.7 Ω IF = 45 A, VGS = 0 IF = 45 A, VGS = 0 diF/dt = 50 A/µs
Note 3 Note 3
Rev.5.00 Apr 07, 2006 page 2 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Main Characteristics
Power vs. Temperature Derating
80 500
Maximum Safe Operation Area
10 µs
Pch (W)
(A)
100
1m
60
s 100
ID
Channel Dissipation
10
DC
µs
Op
er
40
Drain Current
ati
PW on = 10
1
20
Operation in this area is limited by RDS (on) Tc = 25°C 1 shot Pulse 0.3 1 3
ms
0.1
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0
0
50
100
150
200
0.01 0.1
10
30
100
Case Temperature
Tc (°C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 10 V 6V 40 50 4V Pulse Test 3.5 V
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
40
30
30
Drain Current
20 VGS = 3 V 10
20 Tc = 75°C 10 25°C –25°C
0 0 2 4 6 8 10
0 0 1 2 3 4 5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source Saturation Voltage VDS(on) (V)
1.0 Pulse Test 0.8
Drain to Source On State Resistance RDS(on) (mΩ)
100 Pulse Test 50
0.6
20 10 5
VGS = 5 V
0.4
ID = 50 A
10 V
0.2
20 A
10 A
2 1 0.1 0.2 0.5 1
0 0 4 8 12 16 20
2
5 10 20
50 100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.5.00 Apr 07, 2006 page 3 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
40 Pulse Test 32 100 30 10 25°C 3 1 0.3 0.1 0.1 Tc = –25°C 75°C
Static Drain to Source on State Resistance RDS(on) (mΩ)
Forward Transfer Admittance vs. Drain Current
24 ID = 5 A, 10 A 16 VGS = 5 V
ID = 20 A
8 10 V 0 –40 0 40 5 A, 10 A, 20 A 80 120 160
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VDS = 10 V Pulse Test 0.3 1 3 10 30 100
Case Temperature
Tc
(°C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 3000 1000 Coss 300 100 30 10 Crss
Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
1000 500
200 100 50
20 10 0.1
di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100
Capacitance C (pF)
Ciss
VGS = 0 f = 1 MHz 0 10 20 30 40 50
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
(V)
ID = 45 A 40 VDD = 25 V 10 V 5V
Switching Characteristics
VGS (V)
20 500 tr td(off)
50 VGS
VDS
Switching Time t (ns)
16
200 100 50 td(on) 20 10 5 0.1 0.2 0.5 1 tf
Drain to Source Voltage
30
VDS
12
20
8
10
0 0 8 16
VDD = 25 V 10 V 5V 24 32 40
4
Gate to Source Voltage
0
VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 2 5 10 20 50 100
Gate Charge
Qg (nc)
Drain.