DatasheetsPDF.com

H5N2508DL

Part Number	H5N2508DL
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET High Speed Power Switching
Features	www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V...
Published	Nov 20, 2008
Datasheet	H5N2508DL PDF File

Features

www..com 
• Low


• Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) 
• High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) 
• Low gate charge: Qg = 13 nC typ (at VDD = 200 ...

Similar Datasheet

H5N2508DL Silicon N Channel MOS FET High Speed Power Switching - Renesas Technology
H5N2508DS Silicon N Channel MOS FET High Speed Power Switching - Renesas Technology

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)