H5N2504DL

H5N2504DL, H5N2504DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1106-0200 (Previous: ADE-208-1375A) Rev.2.00 Sep 07, 2005 Features www.DataSheet4U.com Low Low on-resistance leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 4 D RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 1 2 G 3 S 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 7 H5N2504DL, H5N2504DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance www.DataSheet4U.com Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 250 ±20 7 28 7 28 7 30 4.17 150 –55 to +150 Unit V V A A A A A W °C/W °C °C IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg Note 1 Note 2 Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total g...