Document
DATA SHEET
SILICON TRANSISTOR
GN4xxx
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
FEATURES
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5 PACKAGE DRAWING (Unit: mm)
0.1 0.3 + −0 0.1 0.15 + −0.05
• Compact package • Resistors built-in type • Complementary to GA4xxx
3
1.25 ± 0.1 2.1 ± 0.1
Marking
ORDERING INFORMATION
PART NUMBER GN4xxx PACKAGE SC-70
0 to 0.1
2
1
0.65
0.65 0.3 0.9 ± 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipation Junction Temperature Storage Temperature
Note
0.1 0.3 + −0
VCBO VCEO VEBO IC IC(pulse) PT Tj Tstg
−60 −50 −5 −0.1 −0.2 0.15 150 −55 to +150
V V V A A W °C °C
R1 2
2.0 ± 0.2
5 EQUIVALENT CIRCUIT
3
5 PIN CONNECTION
1: Emitter 2: Base 3: Collector
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
R2
1
PART NUMBER GN4A4M GN4F4M GN4L4M GN4L3M GN4L3N GN4L3Z GN4A3Q GN4A4P GN4F4N
MARK NA1 NB1 NC1 ND1 NE1 NF1 NG1 NH1 NJ1
R1 10.0 22.0 47.0 4.7 4.7 4.7 1.0 10.0 22.0
R2 10.0 22.0 47.0 4.7 10.0
UNIT kΩ kΩ kΩ kΩ kΩ kΩ
PART NUMBER GN4L4L GN4A4Z GN4F4Z GN4L4Z GN4F3M GN4F3P GN4F3R GN4A4L GN4L4K
MARK NK1 NL1 NM1 NN1 NP1 NQ1 NR1 NS1 NT1
R1 47.0 10.0 22.0 47.0 2.2 2.2 2.2 10.0 47.0
R2 22.0
UNIT kΩ kΩ kΩ kΩ
2.2 10.0 47.0 4.7 10.0
kΩ kΩ kΩ kΩ kΩ
10.0 47.0 47.0
kΩ kΩ kΩ
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Document No. D16490EJ2V0DS00 (2nd edition) Date Published February 2003 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
2002
GN4xxx
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Collector Cut-off Current DC Current Gain SYMBOL ICBO hFE1 hFE2 Collector Saturation Voltage Low-level Input Voltage High-level Input Voltage Input Resistor Emitter to Base Resistor
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TEST CONDITIONS VCB = −50 V, IE = 0 VCE = −5.0 V, IC = −5.0 mA VCE = −5.0 V, IC = −50 mA IC = −5.0 mA, IB = −0.25 mA VCE = −5.0 V, IC = −100 µA VCE = −0.2 V, IC = −5.0 mA
MIN.
TYP.
MAX. −100
UNIT nA -
Note1 −0.2 Note2
VCE(sat) VIL VIH R1 R2
V V V kΩ kΩ
Note3
Note 1.
PART NUMBER MIN. GN4A4M GN4F4M GN4L4M GN4L3M GN4L3N GN4L3Z GN4A3Q GN4A4P GN4F4N GN4L4L GN4A4Z GN4F4Z GN4L4Z GN4F3M GN4F3P GN4F3R GN4A4L GN4L4K 35 60 85 20 35 135 35 85 85 60 135 135 135 8 35 85 20 35 hFE1 TYP. MAX. 100 195 340 80 100 600 100 340 340 195 600 600 600 50 100 340 80 100 MIN. 80 90 95 80 80 100 80 95 95 90 100 100 100 50 80 95 80 80 hFE2 TYP. UNIT MAX. -
5
Note 2.
PART NUMBER MIN. GN4A4M GN4F4M GN4L4M GN4L3M GN4L3N GN4L3Z GN4A3Q GN4A4P GN4F4N GN4L4L GN4A4Z GN4F4Z GN4L4Z GN4F3M GN4F3P GN4F3R GN4A4L GN4L4K VIL TYP. MAX. −0.8 −0.8 −0.8 −0.8 −0.6 −0.5 −0.5 −0.5 −0.6 −0.9 −0.5 −0.5 −0.5 −0.8 −0.5 −0.5 −0.9 −2.0 MIN. −3.0 −4.0 −5.0 −3.0 −3.0 −1.2 −2.0 −3.0 −3.0 −6.0 −2.0 −3.0 −4.0 −3.0 −2.0 −2.0 −6.0 −8.0 VIH TYP. UNIT MAX. V V V V V V V V V V V V V V V V V V
2
Data Sheet D16490EJ2V0DS
GN4xxx
Note 3.
PART NUMBER MIN. GN4A4M GN4F4M GN4L4M GN4L3M GN4L3N GN4L3Z GN4A3Q GN4A4P GN4F4N www.DataSheet4U.com GN4L4L GN4A4Z GN4F4Z GN4L4Z GN4F3M GN4F3P GN4F3R GN4A4L GN4L4K 7.00 15.40 32.90 3.29 3.29 3.29 0.70 7.00 15.40 32.90 7.00 15.40 32.90 1.54 1.54 1.54 7.00 32.90 R1 TYP. 10.00 22.00 47.00 4.70 4.70 4.70 1.00 10.00 22.00 47.00 10.00 22.00 47.00 2.20 2.20 2.20 10.00 47.00 MAX. 13.00 28.60 61.10 6.11 6.11 6.11 1.30 13.00 28.60 61.10 13.00 28.60 61.10 2.86 2.86 2.86 13.00 61.10 MIN. 7.00 15.40 32.90 3.29 7.00 7.00 32.90 32.90 15.40 R2 TYP. 10.00 22.00 47.00 4.70 10.00 10.00 47.00 47.00 22.00 UNIT MAX. 13.00 28.60 61.10 6.11 13.00 13.00 61.10 61.10 28.60 kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ
1.54 7.00 32.90 3.29 7.00
2.20 10.00 47.00 4.70 10.00
2.86 13.00 61.10 6.11 13.00
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW
250
200
150
100
50
0 0 50 100 150 200
TA - Ambient Temperature - °C
Data Sheet D16490EJ2V0DS
3
GN4xxx
[GN4A4M] TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
−50 −40 −30 −20 −10 0
COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT
VCE - Collector to Emitter Voltage - V
- 0.5
IC - Collector Current - mA
IB = −430 µ A
−380 −330 −280 −230 −180 −130 −80
10.0 V
- 0.4 - 0.3 - 0.2 - 0.1 0 0 - 20 - 40 - 60 - 80 - 100
VIN = 5.0 V
15.0 V
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0 −2 −4 −6 −8
−10
VCE - Collector to Emitter Voltage - V
IC - Collector Current - mA
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000
COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT
VCE(sat) - Collector Saturation Voltage - V
-1
VCE = −5.0 V
hFE - DC Current Gain
100
IC = 10 IB
10
TA = 75°C 25°C −25°C
- 0.1
1 -1 - 10 - 100
- 0.01 -1 - 10
TA = 75°C 25°C −25°C
- 100
IC - Collector Current - mA
IC - Collector Current - mA
INPUT VOLTAGE vs. COLLECTOR CURRE.