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GN4A4L Dataheets PDF



Part Number GN4A4L
Manufacturers NEC
Logo NEC
Description RESISTOR BUILT-IN TYPE PNP TRANSISTOR
Datasheet GN4A4L DatasheetGN4A4L Datasheet (PDF)

DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES www.DataSheet4U.com 5 PACKAGE DRAWING (Unit: mm) 0.1 0.3 + −0 0.1 0.15 + −0.05 • Compact package • Resistors built-in type • Complementary to GA4xxx 3 1.25 ± 0.1 2.1 ± 0.1 Marking ORDERING INFORMATION PART NUMBER GN4xxx PACKAGE SC-70 0 to 0.1 2 1 0.65 0.65 0.3 0.9 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curren.

  GN4A4L   GN4A4L


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DATA SHEET SILICON TRANSISTOR GN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES www.DataSheet4U.com 5 PACKAGE DRAWING (Unit: mm) 0.1 0.3 + −0 0.1 0.15 + −0.05 • Compact package • Resistors built-in type • Complementary to GA4xxx 3 1.25 ± 0.1 2.1 ± 0.1 Marking ORDERING INFORMATION PART NUMBER GN4xxx PACKAGE SC-70 0 to 0.1 2 1 0.65 0.65 0.3 0.9 ± 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipation Junction Temperature Storage Temperature Note 0.1 0.3 + −0 VCBO VCEO VEBO IC IC(pulse) PT Tj Tstg −60 −50 −5 −0.1 −0.2 0.15 150 −55 to +150 V V V A A W °C °C R1 2 2.0 ± 0.2 5 EQUIVALENT CIRCUIT 3 5 PIN CONNECTION 1: Emitter 2: Base 3: Collector Note PW ≤ 10 ms, Duty Cycle ≤ 50% R2 1 PART NUMBER GN4A4M GN4F4M GN4L4M GN4L3M GN4L3N GN4L3Z GN4A3Q GN4A4P GN4F4N MARK NA1 NB1 NC1 ND1 NE1 NF1 NG1 NH1 NJ1 R1 10.0 22.0 47.0 4.7 4.7 4.7 1.0 10.0 22.0 R2 10.0 22.0 47.0 4.7 10.0 UNIT kΩ kΩ kΩ kΩ kΩ kΩ PART NUMBER GN4L4L GN4A4Z GN4F4Z GN4L4Z GN4F3M GN4F3P GN4F3R GN4A4L GN4L4K MARK NK1 NL1 NM1 NN1 NP1 NQ1 NR1 NS1 NT1 R1 47.0 10.0 22.0 47.0 2.2 2.2 2.2 10.0 47.0 R2 22.0 UNIT kΩ kΩ kΩ kΩ 2.2 10.0 47.0 4.7 10.0 kΩ kΩ kΩ kΩ kΩ 10.0 47.0 47.0 kΩ kΩ kΩ The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16490EJ2V0DS00 (2nd edition) Date Published February 2003 NS CP(K) Printed in Japan The mark 5 shows major revised points. 2002 GN4xxx ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector Cut-off Current DC Current Gain SYMBOL ICBO hFE1 hFE2 Collector Saturation Voltage Low-level Input Voltage High-level Input Voltage Input Resistor Emitter to Base Resistor www.DataSheet4U.com TEST CONDITIONS VCB = −50 V, IE = 0 VCE = −5.0 V, IC = −5.0 mA VCE = −5.0 V, IC = −50 mA IC = −5.0 mA, IB = −0.25 mA VCE = −5.0 V, IC = −100 µA VCE = −0.2 V, IC = −5.0 mA MIN. TYP. MAX. −100 UNIT nA - Note1 −0.2 Note2 VCE(sat) VIL VIH R1 R2 V V V kΩ kΩ Note3 Note 1. PART NUMBER MIN. GN4A4M GN4F4M GN4L4M GN4L3M GN4L3N GN4L3Z GN4A3Q GN4A4P GN4F4N GN4L4L GN4A4Z GN4F4Z GN4L4Z GN4F3M GN4F3P GN4F3R GN4A4L GN4L4K 35 60 85 20 35 135 35 85 85 60 135 135 135 8 35 85 20 35 hFE1 TYP. MAX. 100 195 340 80 100 600 100 340 340 195 600 600 600 50 100 340 80 100 MIN. 80 90 95 80 80 100 80 95 95 90 100 100 100 50 80 95 80 80 hFE2 TYP. UNIT MAX. - 5 Note 2. PART NUMBER MIN. GN4A4M GN4F4M GN4L4M GN4L3M GN4L3N GN4L3Z GN4A3Q GN4A4P GN4F4N GN4L4L GN4A4Z GN4F4Z GN4L4Z GN4F3M GN4F3P GN4F3R GN4A4L GN4L4K VIL TYP. MAX. −0.8 −0.8 −0.8 −0.8 −0.6 −0.5 −0.5 −0.5 −0.6 −0.9 −0.5 −0.5 −0.5 −0.8 −0.5 −0.5 −0.9 −2.0 MIN. −3.0 −4.0 −5.0 −3.0 −3.0 −1.2 −2.0 −3.0 −3.0 −6.0 −2.0 −3.0 −4.0 −3.0 −2.0 −2.0 −6.0 −8.0 VIH TYP. UNIT MAX. V V V V V V V V V V V V V V V V V V 2 Data Sheet D16490EJ2V0DS GN4xxx Note 3. PART NUMBER MIN. GN4A4M GN4F4M GN4L4M GN4L3M GN4L3N GN4L3Z GN4A3Q GN4A4P GN4F4N www.DataSheet4U.com GN4L4L GN4A4Z GN4F4Z GN4L4Z GN4F3M GN4F3P GN4F3R GN4A4L GN4L4K 7.00 15.40 32.90 3.29 3.29 3.29 0.70 7.00 15.40 32.90 7.00 15.40 32.90 1.54 1.54 1.54 7.00 32.90 R1 TYP. 10.00 22.00 47.00 4.70 4.70 4.70 1.00 10.00 22.00 47.00 10.00 22.00 47.00 2.20 2.20 2.20 10.00 47.00 MAX. 13.00 28.60 61.10 6.11 6.11 6.11 1.30 13.00 28.60 61.10 13.00 28.60 61.10 2.86 2.86 2.86 13.00 61.10 MIN. 7.00 15.40 32.90 3.29 7.00 7.00 32.90 32.90 15.40 R2 TYP. 10.00 22.00 47.00 4.70 10.00 10.00 47.00 47.00 22.00 UNIT MAX. 13.00 28.60 61.10 6.11 13.00 13.00 61.10 61.10 28.60 kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ 1.54 7.00 32.90 3.29 7.00 2.20 10.00 47.00 4.70 10.00 2.86 13.00 61.10 6.11 13.00 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW 250 200 150 100 50 0 0 50 100 150 200 TA - Ambient Temperature - °C Data Sheet D16490EJ2V0DS 3 GN4xxx [GN4A4M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE −50 −40 −30 −20 −10 0 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE - Collector to Emitter Voltage - V - 0.5 IC - Collector Current - mA IB = −430 µ A −380 −330 −280 −230 −180 −130 −80 10.0 V - 0.4 - 0.3 - 0.2 - 0.1 0 0 - 20 - 40 - 60 - 80 - 100 VIN = 5.0 V 15.0 V www.DataSheet4U.com 0 −2 −4 −6 −8 −10 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V -1 VCE = −5.0 V hFE - DC Current Gain 100 IC = 10 IB 10 TA = 75°C 25°C −25°C - 0.1 1 -1 - 10 - 100 - 0.01 -1 - 10 TA = 75°C 25°C −25°C - 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRE.


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