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FY8AAJ-03F

Renesas Technology

High-Speed Switching Use Nch Power MOS FET

FY8AAJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0280-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4...


Renesas Technology

FY8AAJ-03F

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FY8AAJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0280-0100 Rev.1.00 Aug.20.2004 Features Drive voltage : 4 V VDSS : 30 V www.DataSheet4U.com rDS(ON) (max) : 28 mΩ ID : 8 A Outline SOP-8 5,6,7,8 5 8 4 1 4 1,2,3. Source 4. Gate 5,6,7,8. Drain 1,2,3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 30 ±20 8 56 8 1.5 6.0 1.7 – 55 to +150 – 55 to +150 0.07 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FY8AAJ-03F Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance www.DataSheet4U.com Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS...




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