AP40N03GS

AP40N03GS Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOS FET BVDSS RDS(ON) ID G D S 30V 17mΩ 40A ▼ Simple Drive Requirement ▼ Fast Switching TO-263 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40N03GP) is available for low-profile applications. G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 40 30 169 50 0.4 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200218032 AP40N03GS Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj www.DataSheet4U.com Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V...