N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4002T
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ...
Description
AP4002T
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Fast Switching Characteristics ▼ Simple Drive Requirement
www.DataSheet4U.com
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
600V 5Ω 400mA
G S
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is widely used for commercial-industrial applications. TO-92 D S
G
Absolute Maximum Ratings
Symbol VDS VGS ID@TL=25℃ IDM PD@TL=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 ±30 400 3 2 0.017 20 2 -55 to 150 -55 to 150
Units V V mA A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Rthj-l Parameter Maximum Thermal Resistance, Junction-ambient Maximum Thermal Resistance, Junction-lead Value 150 60 Unit ℃/W ℃/W
201019072-1/4
Data & specifications subject to change without notice
AP4002T
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs
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Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current
Test Conditions VGS=0V, ID=1mA VGS=10V, ID=40...
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