Document
H7N1002LD, H7N1002LS, H7N1002LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006
Features
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• Low on-resistance DS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
4
1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
1
2
1
3
2
3
H7N1002LD
H7N1002LS
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
4
G
D
1
2
3
S
H7N1002LM
Rev.7.00 Apr 07, 2006 page 1 of 8
H7N1002LD, H7N1002LS, H7N1002LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature
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Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 100 ±20 75 300 75 50 166 100 150 –55 to +150
Unit V V A A A A mJ W °C °C
IAP Note 3 EAR Pch Tch
Note 2
Note 3
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 100 ±20 — — 1.0 — — 57 — — — — — — — — — — — — Typ — — — — — 8 10 95 9700 740 330 155 35 33 43 245 130 25 0.93 70 Max — — ±10 10 2.5 10 15 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 37.5 A, VGS = 10 V ID = 37.5 A, VGS = 4.5 V Note 4 ID = 37.5 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 75 A VGS = 10 V, ID = 37.5 A RL = 0.8 Ω Rg = 4.7 Ω IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/dt = 100 A/µs
Note 4 Note 4
Rev.7.00 Apr 07, 2006 page 2 of 8
H7N1002LD, H7N1002LS, H7N1002LM
Main Characteristics
Power vs. Temperature Derating
200 1000 300
1
1 1 0 0 µs 0 m µs s
Maximum Safe Operation Area
Pch (W)
ID (A) Drain Current
150
100 30 10 3 DC Operation (Tc = 25°C)
Channel Dissipation
100
50
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0 0 50 100 150 200
PW = 10 ms 1 Operation in (1shot) 0.3 this area is limited by RDS(on) 0.1 Ta = 25°C 0.03 0.1 0.3 1 3 10 30
100 300
Case Temperature
Tc (°C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
50 10 V 4V 50 3.6 V
Typical Transfer Characteristics
VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
40
Pulse Test
40
30
30 3.4 V
Drain Current
20
20
Tc = 75°C 25°C
10
VGS = 3 V
10 –25°C 0
0 0 2 4 6 8 10
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V)
1.0 Pulse Test 0.8
Static Drain to Source on State Resistance vs. Drain Current
50 Pulse Test 20 VGS = 4.5 V 10 5 10 V
0.6 ID = 50 A
0.4
2 1 0.5 2
0.2
20 A 10 A 0 5 10 15 20
0
5
10
20
50
100 200
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.7.00 Apr 07, 2006 page 3 of 8
H7N1002LD, H7N1002LS, H7N1002LM
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance RDS(on) (mΩ)
40 Pulse Test 32 50 A ID = 10 A, 20 A 16 VGS = 4.5 V 50 A 8 10 V 0 –40 0 40 10 A, 20 A
200 100 Tc = –25°C
10 25°C 1 75°C 0.1 0.02 0.01
24
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VDS = 10 V Pulse Test 0.1 1 10 100
80
120
160
Case Temperature
Tc (°C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
20000 10000 Ciss
Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
100
50
Capacitance C (pF)
5000 2000 1000 500 200 100 50 20 0 VGS = 0 f = 1 MHz 10 20 30 40
Coss
20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0.1 0.3 1 3 10 30 100
Crss
50
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VDS (V)
ID = 75 A 160
VGS 16 VDD = 25 V 50 V 80 V
VGS (V)
200
20
1000 300 100 td(on) 30 10 3 1 0.1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % Rg = 4.7 Ω 0.3 1 3 10 30 100 tf td(off) tr
Drain to Source Voltage
120 VDS 80
12
8
40
0 0 80
VDD = 80 V 50 V 25 V.