Silicon N Channel MOS FET High Speed Power Switching
Description
H7N1002AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0130-0200Z Rev.2.00 Oct.30.2003
www.DataSheet4U.com
Features
Low on-resistance RDS(on) = 8 mΩ typ. Low drive current Available for 4.5 V gate drive
Outline
TO-220AB
D
G
S
1 2 3
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00, Oct.30.2003, page 1 of 9
H7N1002AB
Absolute Maximum ...