H7P1002DS

H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com Low drive current 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain H7P0601DS 1 2 3 S H7P0601DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Rating –100 ±20 –15 –60 –15 –12 14.4 30 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Page 1 of 8 H7P1002DL, H7P1002DS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance www.DataSheet4U.com Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay ti...