LH28F800SU

LH28F800SU FEATURES 8M (512K × 16, 1M × 8) Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 5 V Write/Erase Operations (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase WP WE OE RY/BY DQ15 DQ7 DQ14 DQ6 GND DQ13 DQ5 DQ12 DQ4 VCC GND DQ11 DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE NC NC 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 3/5 CE1 NC NC A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 VPP RP A11 A10 A9 A8 GND A7 A6 A5 A4 A3 A2 A1 70 ns Maximum Access Time Minimum 2.7 V Read capability – 160 ns Maximum Access Time (VCC = 2.7 V) 16 Independently Lockable Blocks 0.32 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block Revolutionary Architecture – Pipelined Command Execution – Write During Erase – Command Superset of Sharp LH28F008SA 5 µA (TYP.) ICC in CMOS Standby 1 µA (TYP.) Deep Power-Down State-of-the-Art 0.55 µm ETOX™ Flash Technology 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package 28F800SUR-1 Figure 1. TSOP Reverse Bend Configuration 1 LH28F800SU 8M (512K × 16, 1M × 8) Flash Memory 56-PIN TSOP TOP VIEW INTRODUCTION Sharp’s LH28F800SU 8M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5 V single voltage operation a...