CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Pa...
CYStech Electronics Corp.
PNP Epitaxial Planar
Transistor
Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 1/4
BTA1210J3
Description
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The BTA1210J3 is a
PNP Darlington
transistor, designed for use in general purpose amplifier and low speed switching application.
Features
High BVCEO High DC current gain High current capability Monolithic construction with built-in base-emitter shunt resistors
Equivalent Circuit
BTA1210J3 C B
Outline
TO-252
E B:Base C:Collector E:Emitter B C E
BTA1210J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
www.DataSheet4U.com Power Dissipation
Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date : Page No. : 2/4
Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) RθJA RθJC Tj Tstg
Limits -120 -120 -5 -10 -15 (Note ) 1.75 20 83.3 6.25 150 -55~+150
Unit V V V A A W W °C/W °C/W °C °C
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Characteristics (Ta=25°C)
Symbol BVCEO BVCBO BVEBO ICBO ICEO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -120 -120 -5 1 100 Typ. Max. -200 -200 -2 -2 -4 -4.5 -2.8 12 300 Unit V V V µA µA mA V V V V K pF Test Conditions IC=-1mA, IB=0 IC=-100µA, IE=0 IE=-1mA, IC=...