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BCR8CM-12LA Dataheets PDF



Part Number BCR8CM-12LA
Manufacturers Renesas Technology
Logo Renesas Technology
Description Triac
Datasheet BCR8CM-12LA DatasheetBCR8CM-12LA Datasheet (PDF)

BCR8CM-12LA Triac Medium Power Use REJ03G0295-0300 Rev.3.00 Nov 30, 2007 Features • IT (RMS) : 8 A • VDRM : 600 V www.DataSheet4U.com • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 1 12 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, st.

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BCR8CM-12LA Triac Medium Power Use REJ03G0295-0300 Rev.3.00 Nov 30, 2007 Features • IT (RMS) : 8 A • VDRM : 600 V www.DataSheet4U.com • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 1 12 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, and solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V REJ03G0295-0300 Page 1 of 6 Rev.3.00 Nov 30, 2007 BCR8CM-12LA Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass www.DataSheet4U.com Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Ratings 8 80 26 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 Unit A A A2s W W V A °C °C g Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz,surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 30Note6 30Note6 30Note6 — 2.0 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Note4 Tj = 125°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V Main Current .


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