BB504C

BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier ADE-208-983D (Z) 5th. Edition Dec. 2000 Features www.DataSheet4U.com Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Provide mini mold packages; CMPAK-4 (SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “DS–”. BB504C is individual type number of HITACHI BBFET. BB504C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 30 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.6 0.6 13 24 1.7 1.0 — 25 — 17 — Typ — — — — — 0.85 0.85 16 29 2.1 1.4 0.027 30 1.0 22 1.75 Max — — — +100 +100 1.1 1.1 19 34 2.5 1.8 0.05 — 1.8 — 2.3 Unit V V V nA nA V V mA mS pF pF pF dB dB dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = +10 µA, VG1S = VDS ...