STU9916L

STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS www.DataSheet4U.com 30V FEATURES ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TA= 25 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 20 25 63 20 50 -55 to 175 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1 R JC R JA 3 50 C/W C/W S T U/D9916L E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage www.DataSheet4U.com S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS b Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS = 10V, ID =20A V GS = 4.5V, ID = 20A V DS = 10V, V GS = 10V V DS = 10V, ID = 20A Min Typ Max Unit 30 1 100 0.7 1.0 25 35 20 10 813 127 98 821 130 104 29 12 31 22 20 10 4 4 1.5 V uA nA V Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate...