S T U/D25N03L
S amHop Microelectronics C orp.
J uly 11 , 2005
N-C hannel E nhancement Mode Field E ffect Transistor
P ...
S T U/D25N03L
S amHop Microelectronics C orp.
J uly 11 , 2005
N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
www.DataSheet4U.com 30V
F E AT UR E S
( m W ) Max
ID
25A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
21 @ V G S = 10V 32 @ V G S = 4.5V
R ugged and reliable. TO251 and TO 252 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 25 75 20 50 -55 to 175 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient a
1
R JC R JA
3 50
C /W C /W
S T U/D25N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =10A V GS =4.5V, ID= 6A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A
Min Typ C Max Unit
30 1 V uA 100 nA 1 1.7 17 25 20
16
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current
www.DataSheet4U.com
Ga...