Document
S T U/D25N03L
S amHop Microelectronics C orp.
J uly 11 , 2005
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
www.DataSheet4U.com 30V
F E AT UR E S
( m W ) Max
ID
25A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
21 @ V G S = 10V 32 @ V G S = 4.5V
R ugged and reliable. TO251 and TO 252 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 25 75 20 50 -55 to 175 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient a
1
R JC R JA
3 50
C /W C /W
S T U/D25N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =10A V GS =4.5V, ID= 6A V DS = 10V, V GS = 10V V DS = 10V, ID = 10A
Min Typ C Max Unit
30 1 V uA 100 nA 1 1.7 17 25 20
16
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current
www.DataSheet4U.com
Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 3 32 V
m ohm
21 m ohm A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =15V, V GS = 0V f =1.0MH Z 940 148 85 V DD = 15V R L=15 ohm ID = 1A V GS = 10V R GE N = 6 ohm V DS =15V, ID =10A,V GS =10V V DS =15V, ID =10A,V GS =4.5V Q gs Q gd
2
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg
13 10 30 6 15.9 7.4 2.0 4.1
ns ns ns ns nC nC nC nC
V DS =15V, ID =10A V GS =10V
S T U/D25N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Diode Forward Voltage
www.DataSheet4U.com
S ymbol
VSD
Condition
V GS = 0V, Is = 20A
Min Typ Max Unit
1 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
20
V G S =10,~4.5V
20 25 C 15
16
ID , Drain C urrent(A)
12
V G S =3.5V
I D , Drain C urrent (A)
V G S =4V
10
8 4 0
V G S =3V
5
T j=125 C
-55 C
0
0 0.5 1 1.5 2 2.5 3
0
1
2
3
4
5
6
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1200 1.6
F igure 2. Trans fer C haracteris tics
R DS (ON) , On-R es is tance Normalized
1000
C is s
1.4 1.2 1.0 0.8 0.6 0.4 -55
C , C apacitance (pF )
V G S =10V I D =10A
800 600 400 200 C rs s 0 0 5 10 15 20 25 30 C os s
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T U/D25N03L
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
www.DataSheet4U.com
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
24 V DS =10V
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
gF S , T rans conductance (S )
Is , S ource-drain current (A)
20 16 12 8 4 0 0 5 10 15 20
10.0
1.0 0.4 0.6 0.8 1.0 1.2 1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
10
I D , Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
80
V G S , G ate to S ource V oltage (V )
N)
L im
it
8 6 4 2 0 0
V DS =15V I D =10A
60
1m s 10
RD
10
10
1s
DC
m 0m s s
1 0.5 0.1
V G S =10V S ingle P ulse T c=25 C
S
(O
2
4
6
8
10
12
14 16
1
10
30
60
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge 4
F igure 10. Maximum S afe O perating Area
S T U/D25N03L
V DD ton V IN D VG S R GE N www.DataSheet4U.com G
90%
toff tr
90%
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
5
10%
INVE R TE D
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective T ransient T hermal Impedance
1 Duty C ycle=0.5
0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10
-4
P DM t1 1. 2. 3. 4. 1.