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STP16NM50N Dataheets PDF



Part Number STP16NM50N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STP16NM50N DatasheetSTP16NM50N Datasheet (PDF)

STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features www.DataSheet4U.com Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N 15 A 15 A 15 A (1) D²PAK 2 1 3 I²PAK 15 A 15 A 3 1 2 TO-247 3 1 2 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low i.

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STB16NM50N - STF/I16NM50N STP16NM50N - STW16NM50N N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP Features www.DataSheet4U.com Type VDSS (@Tjmax) 550 V 550 V 550 V 550 V 550 V RDS(on) max 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω 0.26 Ω ID 1 3 3 12 STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N 15 A 15 A 15 A (1) D²PAK 2 1 3 I²PAK 15 A 15 A 3 1 2 TO-247 3 1 2 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking B16NM50N I16NM50N F16NM50N P16NM50N W16NM50N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube Order codes STB16NM50N STI16NM50N STF16NM50N STP16NM50N STW16NM50N March 2008 Rev 2 1/18 www.st.com 18 Contents STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 www.DataSheet4U.com 3 Test circuit ................................................ 9 4 5 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maximum ratings Value Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 500 ± 25 15 9.4 60 125 15 --55 to 150 150 2500 15 (1) 9.4 (1) 60 (1) 30 Unit VDS www.DataSheet4U.com Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Storage temperature Max. operating junction temperature V V A A A W V/ns V °C °C VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤15A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Value Parameter TO-220 I²PAK D²PAK TO-247 TO-220FP Thermal resistance junctioncase max Thermal resistance junctionamb max Thermal resistance junctionpcb max Maximum lead temperature for soldering purposes -62.5 -Unit Rthj-case Rthj-amb Rthj-pcb Tl 1 -30 300 50 -- 4.2 62.5 -- °C/W °C/W °C/W °C Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD= 50V) Max value 6 470 Unit A mJ 3/18 Electrical characteristics STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 400 V,ID = 15 A, VGS = 10 V VDS = Max rating, VDS = Max rating@125 °C VGS = ±20 V VDS= VGS, ID = 250 µA VGS= 10 V, ID= 7.5 A 2 3 0.21 Min. 500 30 1 100 100 4 0.26 Typ. Max. Unit V V/ns µA µA nA V Ω www.DataSheet4U.com dv/dt(1) IDSS IGSS VGS(th) RDS(on) 1. Characteristics value at turn off on inductive load Table 6. Symbol gfs(1) Ciss Coss Crss Coss eq.(2) Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS =15 V, ID= 7.5 A VDS = 50 V, f =1 MHz, VGS = 0 Min. Typ. 10 1200 80 10 170 Max. Unit S pF pF pF pF VGS = 0, VDS = 0 to 400 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 400 V, ID = 15 A VGS = 10 V (see Figure 19) Rg 5 Ω nC nC nC Qg Qgs Qgd 1. Total gate charge Gate-source charge Gate-drain charge 38 7 19 Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STB16NM50N - STF.


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