N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Description
STU8NA80
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STU8NA80
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s s
V DSS 800 V
R DS(on) < 1.0 Ω
ID 8.3 A
s s s s
TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD.
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