Document
STP6NK90Z - STP6NK90ZFP STB6NK90Z - STW7NK90Z
N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH™ Power MOSFET
Features
Type
STP6NK90Z STP6NK90ZFP
STB6NK90Z STW7NK90Z
VDSS 900 V 900 V 900 V 900 V
RDS(on) <2Ω <2Ω <2Ω <2Ω
ID 5.8 A 5.8 A 5.8 A 5.8 A
■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs.
Application
■ Switching application
TO-220
3 2 1
TO-220FP
3 1
D2PAK
TO-247
Internal schematic diagram
Order codes
Part number STP6NK90Z STP6NK90ZFP STB6NK90ZT4 STW7NK90Z
April 2007
Marking P6NK90Z P6NK90ZFP B6NK90Z W7NK90Z
Package
TO-220 TO-220FP
D2PAK TO-247
Rev 5
Packaging Tube Tube
Tape e reel Tube
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Contents
Contents
STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
1 Electrical ratings
Electrical ratings
Table 1. Symbol
Absolute maximum ratings Parameter
VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID Drain current (continuous) at TC = 25°C ID Drain current (continuous) at TC = 100°C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25°C
Derating factor dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1s; Tc= 25°C)
Tj Max operating junction temperature Tstg Storage temperature
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤5.8 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Value
TO-220/ D2PAK/TO247
900 ± 30 5.8 3.65 23.2 140 1.12 4.5
TO220FP
5.8 (1) 3.65 (1) 23.2 (1)
30 0.24
- 2500
-55 to 150
Unit
V V A A A W W/°C V/ns
V
°C °C
Table 2. Symbol
Thermal data Parameter
Rthj-case
Thermal resistance junctioncase max
Rthj-pcb
Thermal resistance junctioncase max
Rthj-amb
Thermal resistance junctionambient max
Tl
Maximum lead temperature for soldering purpose
TO-220
Value D2PAK TO-220FP TO-247
Unit
0.89 4.2 0.89 °C/W
60 °C/W
62.5 50 °C/W
300 °C
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Electrical ratings
STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
1.1
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive IAR (pulse width limited by Tj Max)
Single pulse avalanche energy EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Value 5.8 300
Unit A mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30
V
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source Breakdown voltage
IDSS
Zero gate voltage Drain current (VGS = 0)
IGSS
Gate-body leakage Current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on resistance
Test conditions
Min. Typ. Max. Unit
ID =1mA, VGS = 0
900
VDS = Max Rating VDS = Max Rating, TC = 125°C
V
1 µA 50 µA
VGS = ± 20 V VDS = VGS, ID = 100 µA VGS = 10 V, ID = 2.9 A
± 10 µA
3 3.75 4.5 1.56 2
V Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS = 15v, ID = 2.9 A
5S
.