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STP6NK90ZFP Dataheets PDF



Part Number STP6NK90ZFP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STP6NK90ZFP DatasheetSTP6NK90ZFP Datasheet (PDF)

STP6NK90Z - STP6NK90ZFP STB6NK90Z - STW7NK90Z N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type STP6NK90Z STP6NK90ZFP STB6NK90Z STW7NK90Z VDSS 900 V 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A 5.8 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SuperMESH™ series is obtained through .

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STP6NK90Z - STP6NK90ZFP STB6NK90Z - STW7NK90Z N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type STP6NK90Z STP6NK90ZFP STB6NK90Z STW7NK90Z VDSS 900 V 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A 5.8 A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. Application ■ Switching application TO-220 3 2 1 TO-220FP 3 1 D2PAK TO-247 Internal schematic diagram Order codes Part number STP6NK90Z STP6NK90ZFP STB6NK90ZT4 STW7NK90Z April 2007 Marking P6NK90Z P6NK90ZFP B6NK90Z W7NK90Z Package TO-220 TO-220FP D2PAK TO-247 Rev 5 Packaging Tube Tube Tape e reel Tube 1/18 www.st.com 18 Contents Contents STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID Drain current (continuous) at TC = 25°C ID Drain current (continuous) at TC = 100°C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25°C Derating factor dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) Tj Max operating junction temperature Tstg Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤5.8 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Value TO-220/ D2PAK/TO247 900 ± 30 5.8 3.65 23.2 140 1.12 4.5 TO220FP 5.8 (1) 3.65 (1) 23.2 (1) 30 0.24 - 2500 -55 to 150 Unit V V A A A W W/°C V/ns V °C °C Table 2. Symbol Thermal data Parameter Rthj-case Thermal resistance junctioncase max Rthj-pcb Thermal resistance junctioncase max Rthj-amb Thermal resistance junctionambient max Tl Maximum lead temperature for soldering purpose TO-220 Value D2PAK TO-220FP TO-247 Unit 0.89 4.2 0.89 °C/W 60 °C/W 62.5 50 °C/W 300 °C 3/18 Electrical ratings STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z 1.1 Table 3. Avalanche characteristics Symbol Parameter Avalanche current, repetitive or not-repetitive IAR (pulse width limited by Tj Max) Single pulse avalanche energy EAS (starting Tj=25°C, Id=Iar, Vdd=50V) Value 5.8 300 Unit A mJ Table 4. Gate-source zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/18 STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage IDSS Zero gate voltage Drain current (VGS = 0) IGSS Gate-body leakage Current (VDS = 0) VGS(th) Gate threshold voltage RDS(on) Static drain-source on resistance Test conditions Min. Typ. Max. Unit ID =1mA, VGS = 0 900 VDS = Max Rating VDS = Max Rating, TC = 125°C V 1 µA 50 µA VGS = ± 20 V VDS = VGS, ID = 100 µA VGS = 10 V, ID = 2.9 A ± 10 µA 3 3.75 4.5 1.56 2 V Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 15v, ID = 2.9 A 5S .


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