N-CHANNEL MOSFET
STY30NK90Z
N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH™ Power MOSFET
General features
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Description
STY30NK90Z
N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH™ Power MOSFET
General features
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Type
VDSS 900V
RDS(on) <0.26Ω
ID 28A
pW 500W
STY30NK90Z
■ ■ ■ ■ ■
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
Max247
1 2 3
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Internal schematic diagram
Applications
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Switching application
Order codes
Part number STY30NK90Z Marking Y30NK90Z Package Max247 Packaging Tube
October 2006
Rev 4
1/14
www.st.com 14
Contents
STY30NK90Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2
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Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................. 7
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . ...
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