Document
an AMP comDanv
Wireless Power Transistor, 33W 1805 - 1880 MHz
Features
l l l l l
PHl819-33
v2.01 I.744 (18.90)-1
NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System
225 (5.72)*.015 (0.38)
, I
;48/6.30) &&y&T
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1
*\I
1
f
CqO(6.35)
Absolute’ Maximum Ratings at 25°C
I Parameter
Collector-EmitterVoltage Collector-EmitterVoltage Emitter-Base Voltage CollectorCurrent Power Dissipation StorageTemperature ) JunctionTemperature Thermal Resistance
I Sym~l VCEO VcE.s Vem I ‘c PO T c-Fe ) T, 6JC
I
Rating
25 65 3.0
1 Units
V V
1
225(5.72)+.015
(0.38)
,181 (4.6O)zt.OlO (0.25)
(5.59)
2.20 I-.co5 (0.13)+.001 (0.03) 1 I / 11 D6Ojl.52) f
V
I
4.7 91
-55 to +150
I
* w
“C
I
t+ .087 (2.21)r.OlO (0.25)
1
200
3.0
I
“C
“C/W
I
UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES t.005’ (MILLIMETERS t0.13MM)
Electrical Characteristics
Parameter Power Gain Collector Efficiency Input Return Loss
r
at 25°C
Symbol GP
%
Min
7.0
40
Max
-
Units dB
%
Test Conditions I’,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz V,,=25 V, l,Q=200 mA, P,,,=33 W, F=l805,1880 V,,=25 V, I,,=200 mA, P,,,=33 W, F=l805,1880 MHz MHz
RL VSWR-T
10 -
2:l
dB -
Load Mismatch Tolerance
V,,=25 V, I,,=200 mA, PO,,=33 W, F=1805,1880 MHz
Broadband Test Fixture impedances
I-
1805 ~~ 1850
I
1.8 - j5.5
I
4.0-j1.4
I
1.6 - j5.1 l.?-j4.8
3.9 - jl.4
4.0 - j0.9
1880
Wireless Power Transistor,
33W
PM81 9-33
v2.01
RF Test Fixture
DIODE lN4245 POLARITY BAND AT BOlTcc( 1 r CAPAC,rlOR
AWG ON 3 OH .25 w / I/ ELECTROLYIX PC BOARDS ROGERS 6810.5 .025" 2 PLACES CAPAClTOR. 50 UF 50 V UALLORY Tl50M50A
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5t.U CONNECTOR,
HEATSINK, ALUMINUM 73050255-14 -0
M/A-COM
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CAPACITORS, 33pF AlC100A 4 PLACES
BOARD CARRIER BOPRD CARRIER BRASS 73050257-12 J L I! TRANSISTOR CARRIER, COPPER 7305025601 TRANSISTOR CLAJ4P, NORYL 74250125-01 BWS 73050257-12
Test Fixture PC Board Dimensions
1.612” .988”
1
.