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STB4NB50

STMicroelectronics
Part Number STB4NB50
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Nov 18, 2008
Detailed Description ® STB4NB50 N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB4NB50 www.DataSheet...
Datasheet PDF File STB4NB50 PDF File

STB4NB50
STB4NB50

Overview
® STB4NB50 N - CHANNEL 500V - 2.
5Ω - 3.
8A - D2PAK/I2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB4NB50 com s s s s s V DSS 500 V R DS(on) < 2.
8 Ω ID 3.
8 A TYPICAL RDS(on) = 2.
5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 12 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and...


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