AO6804

AO6804 Dual N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS = 20V ID = 5.0A (VGS = 4.5V) Typical Rds RDS(ON) < 24mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 4.0V) RDS(ON) < 28mΩ (VGS = 3.1V) RDS(ON) < 31mΩ (VGS = 2.5V) The AO6804 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6804 is Pb-free (meets ROHS & Sony 259 specifications). D1 TSOP6 Top View S1 D1/D2 S2 1 6 2 5 3 4 G1 D1/D2 G2 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter VDS Drain-Source Voltage 20 VGS ±12 Gate-Source Voltage Continuous Drain 5 4 TA=25°C Current A TA=70°C 4 3.2 ID Pulsed Drain Current Power Dissipation A B Units V V A IDM PD TJ, TSTG 1.3 0.8 25 0.8 0.5 -55 to 150 W °C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t ≤ 10s Steady State Steady State RθJA RθJL Typ 76 118 54 Max 95 150 68 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6804 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) www.DataSheet4U.com Conditions ID = 250µA, VGS = 0V VDS = 20V, VGS = 0V ...