AO6700

AO6700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6700 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6700 is Pb-free (meets ROHS & Sony www.DataSheet4U.com 259 specifications). AO6700L is a Green Product ordering option. AO6700 and AO6700L are electrically identical. Features VDS (V) = 20V ID = 4.1A (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 4.5V) RDS(ON) < 65mΩ (VGS = 2.5V) RDS(ON) < 95mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<[email protected] D TSOP6 Top View K S G A D D K 1 6 2 5 3 4 G S A Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current B A MOSFET 20 ±8 4.1 3.3 10 Schottky Units V V A VGS TA=70°C ID IDM VKA TA=25°C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C A B TA=70°C TA=25°C TA=70°C IF IFM PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL 1.39 0.89 -55 to 150 Typ 70 102 51 129 158 52 20 1.5 1 10 0.78 0.5 -55 to 150 Max 90 130 80 160 200 80 V A W °C Units °C/W Steady-State Steady-State t ≤ 10s Steady-State Ste...