AO6604

AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. N-Channel VDS= 20V ID= 3.4A (VGS=4.5V) RDS(ON) < 65mΩ (VGS=4.5V) < 75mΩ (VGS=2.5V) < 100mΩ (VGS=1.8V) P-Channel -20V -2.5A (VGS=-4.5V) RDS(ON) < 75mΩ (VGS=-4.5V) < 95mΩ (VGS=-2.5V) < 115mΩ (VGS=-1.8V) TSOP6 Top View Bottom View Top View D1 D2 G1 1 6 D1 S2 2 G2 3 5 S1 4 D2 G1 G2 S1 S2 Pin1 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±8 ±8 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C 3.4 -2.5 ID 2.5 -2 IDM 13 -13 TA=25°C Power Dissipation B TA=70°C 1.1 1.1 PD 0.7 0.7 Junction and Storage Temperature Range TJ, TSTG -55 to 15...