N-CHANNEL MOSFET
N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET
TYPE STD4NS25
www.DataSheet4U.com s TYPICAL
s s s
STD4NS25
V...
Description
N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK MESH OVERLAY™ MOSFET
TYPE STD4NS25
www.DataSheet4U.com s TYPICAL
s s s
STD4NS25
VDSS 250 V
RDS(on) < 1.1 Ω
ID 4A
RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
3 1
DPAK TO-252 IPAK TO-251
1
3 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 4 2.5 16 50 0.4 5 –65 to 150 150
(1) ISD≤ 4A, di/dt≤300 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX
Unit V V V A A A W W/°C V/ns °C °C
()Pulse width limited by safe operating area
February 2001
1/9
STD4NS25
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink Tl Thermal Resis...
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