Document
STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD
N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET
General features
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Type
VDSS 500V 500V 500V 500V
RDS(on) <2.7Ω <2.7Ω <2.7Ω <2.7Ω
ID 3A 3A 3A 3A
Pw
1
3
STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD
■ ■ ■ ■ ■
45W 45W 20W 45W TO-220
3 1 2
DPAK
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability
1 3 2
1 3 2
IPAK
TO-220FP
Description
The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD Marking D4NK50ZD-1 D4NK50ZD F4NK50ZD P4NK50ZD Package IPAK DPAK TO-220FP TO-220 Packaging Tube Tape & reel Tube Tube
April 2006
Rev 3
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Contents
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 6
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3 4 5 6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR
Absolute maximum ratings
Value Parameter TO-220 IPAK/DPAK TO-220FP Drain-source voltage (VGS = 0) Drain-gate voltage (R GS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at T C = 25°C Derating factor 3 1.9 12 45 0.36 2800 15 ---55 to 150 2500 500 500 ± 30 3 (1) 1.9 (1) 12 (1) 3 (1) 1.9 (1) 12 (1) 20 0.16 V V V A A A W W/°C V V/ns V °C Unit
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VGS ID ID IDM(2) PTOT
VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5K Ω) dv/dt(3) VISO TJ Tstg Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-a Tl
Thermal resistance
Value Parameter TO-220 IPAK/DPAK TO-220FP Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose 62.5 2.78 100 300 6.25 62.5 °C/W °C/W °C Unit
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 3 120 Unit A mJ
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Electrical characteristics
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 4.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125°C VGS = ±20V VDS= V GS, ID = 50µA VGS= 10V, ID= 1.5A 2.5 3.5 2.3 Min. 500 1 50
±10
Typ.
Max.
Unit V µA µA µA V Ω
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IDSS
IGSS VGS(th) RDS(on)
4.5 2.7
Table 5.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test condictions VDS =15V, ID = 1.5A VDS = 25V, f = 1 MHz, VGS= 0 Min. Typ. 1.5 310 49 10 33 12 3 7 Max. Unit S pF pF pF pF nC nC nC
Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge
VGS= 0, VDS =0V to 400V VDD= 400V, ID = 3A VGS =10V (see Figure 11)
1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS inceases from 0 to 80% VDSS
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test condictions VDD = 250 V, ID= 1.5A, RG = 4.7 Ω, VGS =10V (see Figure 18) Min. Typ. 9.5 15.5 23 22 Max. Unit ns ns ns ns
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STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Electrical characteristics
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr
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Source drain diode
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