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STD4NK50ZD Dataheets PDF



Part Number STD4NK50ZD
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STD4NK50ZD DatasheetSTD4NK50ZD Datasheet (PDF)

STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET General features www.DataSheet4U.com Type VDSS 500V 500V 500V 500V RDS(on) <2.7Ω <2.7Ω <2.7Ω <2.7Ω ID 3A 3A 3A 3A Pw 1 3 STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD ■ ■ ■ ■ ■ 45W 45W 20W 45W TO-220 3 1 2 DPAK 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing re.

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STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET General features www.DataSheet4U.com Type VDSS 500V 500V 500V 500V RDS(on) <2.7Ω <2.7Ω <2.7Ω <2.7Ω ID 3A 3A 3A 3A Pw 1 3 STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD ■ ■ ■ ■ ■ 45W 45W 20W 45W TO-220 3 1 2 DPAK 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeability 1 3 2 1 3 2 IPAK TO-220FP Description The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology. Internal schematic diagram Applications ■ Switching application Order codes Part number STD4NK50ZD-1 STD4NK50ZD STF4NK50ZD STP4NK50ZD Marking D4NK50ZD-1 D4NK50ZD F4NK50ZD P4NK50ZD Package IPAK DPAK TO-220FP TO-220 Packaging Tube Tape & reel Tube Tube April 2006 Rev 3 1/17 www.st.com 17 Contents STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 6 www.DataSheet4U.com 3 4 5 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/17 STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR Absolute maximum ratings Value Parameter TO-220 IPAK/DPAK TO-220FP Drain-source voltage (VGS = 0) Drain-gate voltage (R GS = 20KΩ) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC=100°C Drain current (pulsed) Total dissipation at T C = 25°C Derating factor 3 1.9 12 45 0.36 2800 15 ---55 to 150 2500 500 500 ± 30 3 (1) 1.9 (1) 12 (1) 3 (1) 1.9 (1) 12 (1) 20 0.16 V V V A A A W W/°C V V/ns V °C Unit www.DataSheet4U.com VGS ID ID IDM(2) PTOT VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5K Ω) dv/dt(3) VISO TJ Tstg Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS Table 2. Symbol Rthj-case Rthj-a Tl Thermal resistance Value Parameter TO-220 IPAK/DPAK TO-220FP Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose 62.5 2.78 100 300 6.25 62.5 °C/W °C/W °C Unit Table 3. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value 3 120 Unit A mJ 3/17 Electrical characteristics STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125°C VGS = ±20V VDS= V GS, ID = 50µA VGS= 10V, ID= 1.5A 2.5 3.5 2.3 Min. 500 1 50 ±10 Typ. Max. Unit V µA µA µA V Ω www.DataSheet4U.com IDSS IGSS VGS(th) RDS(on) 4.5 2.7 Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test condictions VDS =15V, ID = 1.5A VDS = 25V, f = 1 MHz, VGS= 0 Min. Typ. 1.5 310 49 10 33 12 3 7 Max. Unit S pF pF pF pF nC nC nC Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VGS= 0, VDS =0V to 400V VDD= 400V, ID = 3A VGS =10V (see Figure 11) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS inceases from 0 to 80% VDSS Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test condictions VDD = 250 V, ID= 1.5A, RG = 4.7 Ω, VGS =10V (see Figure 18) Min. Typ. 9.5 15.5 23 22 Max. Unit ns ns ns ns 4/17 STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD Electrical characteristics Table 7. Symbol ISD ISDM(1) VSD(2) trr Qrr www.DataSheet4U.com Source drain diode .


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