STD40NF06LZ

N-CHANNEL 60V - 0.020 Ω - 40A DPAK Zener-Protected STripFET™ II POWER MOSFET TYPE STD40NF06LZ www.DataSheet4U.com s TYPICAL s s s s STD40NF06LZ VDSS 60 V RDS(on) < 25 mΩ ID 40 A s RDS(on) = 0.020Ω 100% AVALANCHE TESTED LOW GATE CHARGE LOGIC LEVEL GATE DRIVE SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") BUILT-IN ZENER DIODES TO IMPROVE ESD PROTECTION UP TO 2kV 3 1 DPAK TO-252 (Suffix “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SINGLE-ENDED SMPS IN MONITOTS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot VESD(G-S) dv/dt(1) EAS(2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source ESD(HBM-C=100pF, R=15kΩ) Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM Value 60 60 ± 16 40 28 160 100 0.67 ± 2.5 9 450 -55 to 175 (1)ISD ≤40A, di/dt ≤100A/µs, VDD ≤ V...