BUK7225-55A
TrenchMOS™ standard level FET
Rev. 01 — 17 April 2001
M3D300
Product specification
1. Description
www.DataS...
BUK7225-55A
TrenchMOS™ standard level FET
Rev. 01 — 17 April 2001
M3D300
Product specification
1. Description
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N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK7225-55A in SOT428 (D-PAK).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Standard level compatible.
3. Applications
s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
c c
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Description gate (g)
mb d
Simplified outline
Symbol
drain (d) source (s) drain (d)
MBB076
g s
2 1 Top view 3
MBK091
SOT428 (D-PAK)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BUK7225-55A
TrenchMOS™ standard level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon
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Quick reference data Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C 21 − 25 50 Typ − − − − Max 55 43 94 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance
Symbol Parameter
mΩ mΩ
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM WDSS drain-source v...