DatasheetsPDF.com

11DQ05 Dataheets PDF



Part Number 11DQ05
Manufacturers International Rectifier
Logo International Rectifier
Description (11DQ05 / 11DQ06) SCHOTTKY RECTIFIER
Datasheet 11DQ05 Datasheet11DQ05 Datasheet (PDF)

Bulletin PD-2.288 rev. E 03/03 11DQ05 11DQ06 www.DataSheet4U.com SCHOTTKY RECTIFIER 1.1 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 1 Apk, TJ = 125°C range Description/ Features Units A V A V °C The 11DQ.. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery.

  11DQ05   11DQ05


Document
Bulletin PD-2.288 rev. E 03/03 11DQ05 11DQ06 www.DataSheet4U.com SCHOTTKY RECTIFIER 1.1 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 1 Apk, TJ = 125°C range Description/ Features Units A V A V °C The 11DQ.. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Low profile, axial leaded outline High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability 11DQ.. 1.1 50/60 150 0.53 - 40 to 150 CASE STYLE AND DIMENSIONS Conform to JEDEC Outline DO-204AL (DO-41) Dimensions in millimeters and inches www.irf.com 1 11DQ05, 11DQ06 Bulletin PD-2.288 rev. E 03/03 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 11DQ05 50 11DQ06 60 www.DataSheet4U.com Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 4 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6 Non-Repetitive Avalanche Energy Repetitive Avalanche Current 150 25 2.0 1.0 A mJ A 5µs Sine or 3µs Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied 11DQ.. 1.1 Units A Conditions 50% duty cycle @ TC = 84°C, rectangular wave form TJ = 25 °C, IAS = 1 Amps, L = 4 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 11DQ.. Units Conditions 0.58 0.76 0.53 0.64 1.0 11 55 8.0 10000 V V V V mA mA pF nH V/µs @ 1A @ 2A @ 1A @ 2A TJ = 25 °C TJ = 125 °C VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C Measured lead to lead 5mm from package body (Rated VR) VR = rated VR TJ = 25 °C TJ = 125 °C IRM CT LS Max. Reverse Leakage Current * See Fig. 2 Typical Series Inductance (1) Typical Junction Capacitance dv/dt Max. Voltage Rate of Change (1) Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range (*) Max. Storage Temperature Range 11DQ.. Units Conditions -40 to 150 -40 to 150 100 81 °C °C °C/W DC operation Without cooling fin °C/W DC operation (See Fig. 4) RthJA Max. Thermal Resistance Junction to Ambient RthJL Typical Thermal Resistance Junction to Lead wt Approximate Weight Case Style (*) dPtot dTj < 1 Rth( j-a) 0.33(0.012) g (oz.) DO-204AL(DO-41) thermal runaway condition for a diode on its own heatsink 2 www.irf.com 11DQ05, 11DQ06 Bulletin PD-2.288 rev. E 03/03 100 www.DataSheet4U.com 10 Reverse Current - IR(mA) 10 1 0.1 0.01 0.001 T J = 150˚C 125˚C 25˚C Instantaneous Forward Current - IF (A) 0.0001 0 10 20 30 40 50 60 Reverse Voltage - VR(V) 70 T J = 150˚C Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 1 T J = 125˚C T J = 25˚C 100 Junction Capacitance - CT (pF) T J = 25˚C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 0 10 20 30 40 50 60 70 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage www.irf.com 3 11DQ05, 11DQ06 Bulletin PD-2.288 rev. E 03/03 160 Allowable Case Temperature (°C) Average Power Loss (Watts) 0.8 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 RMS Limit DC www.DataSheet4U.com 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Average Forward Current - IF(AV) (A) Square wave (D = 0.50) 80% Rated Vr applied DC 0.6 0.4 0.2 see note (2) 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Average Forward Current - IF(AV) (A) Fig. 5 - Forward Power Loss Characteristics Fig. 4 - Maximum Ambient Temperature Vs. Average Forward Current, Printed Circuit Board Mounted 1000 Non-Repetitive Surge Current-IFSM (A) At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 100 10 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 6 - Maximum Non-Repetitive Surge Current (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 11DQ05, 11DQ06 Bulletin PD-2.288 rev. E 03/03 Ordering Information Table Device Code www.DataSheet4U.com 11 1 D 2 Q 3 06 4 TR 5 1 2 3 4 5 - 11 = 1.1A (Axial and small packages - Current is x10) D = DO-41 package Q = Schottky Q.. Series 10 = Voltage Ratings TR = Tape & Reel package ( 5000 pcs) = Box package (1000 pcs) 06 = 60V 05 = 50V Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas S.


11DQ04 11DQ05 11DQ06


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)