Document
APM4546K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel 30V/7A, RDS(ON) =20mΩ (typ.) @ VGS = 10V RDS(ON) =27mΩ (typ.) @ VGS = 4.5V P-Channel -30V/-5A, RDS(ON) =38mΩ (typ.) @ VGS =-10V RDS(ON) =46mΩ (typ.) @ VGS =-4.5V
Pin Description
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•
Top View of SOP − 8
(8) D1 (7) D1 (3) S2
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
(2) G1 (4) G2
Applications
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Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
S1 (1) D2 (5) D2 (6)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
APM4546
Lead Free Code Handling Code Temp. Range Package Code APM4546 K : APM4546 XXXXX Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw
APM4546K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM*
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(TA = 25°C unless otherwise noted)
N Channel 30 ±16 VGS=10V (N) VGS=-10V (P) 7 25 2 150 -55 to 150 TA=25°C TA=100°C 2 0.8 62.5 °C/W P Channel -30 ±16 -5 -20 -2 Unit V A A °C W
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation
IS* TJ TSTG PD* RθJA*
Thermal Resistance-Junction to Ambient
2
Note: *Surface Mounted on 1in pad area, t ≤ 10sec.
Electrical Characteristics
(TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM4546K Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 38 27 46 0.8 -0.8 1.5 -1.5 30 -30 1 30 -1 -30 2 -2 ±100 ±100 26 50 36 60 Typ. Max.
Unit
Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VGS=0V, IDS=-250µA VDS=24V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VDS=-24V, VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=VGS, IDS=250µA VDS=VGS, IDS=-250µA VGS=±16V, VDS=0V VGS=±16V, VDS=0V VGS=10V, IDS=7A RDS(ON) a Drain-Source On-State Resistance VGS=-10V, IDS=-5A VGS=4.5V, IDS=5A VGS=-4.5V, IDS=-4A V
µA
V
nA
mΩ
Copyright © ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
2
www.anpec.com.tw
APM4546K
Electrical Characteristics (Cont.)
Symbol Parameter
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