5STP45Q2200

VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 5490 A 8625 A 75000 A 0.86 V 0.070 mΩ Doc. No. 5SYA1050-01 Sep.00 Phase Control Thyristor 5STP 45Q2800 www.DataSheet4U.com Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate. Blocking Part Number VDRM VRSM1 IDRM IRRM dV/dtcrit VRRM 5STP 45Q2800 2800 V 3000 V 5STP 45Q2600 2600 V 2800 V ≤ 400 mA ≤ 400 mA 1000 V/µs 5STP 45Q2200 2200 V 2400 V Conditions f = 50 Hz, tp = 10ms tp = 5 ms, single pulse VDRM VRRM @ Exp. to 0.67xVDRM Tj = 125°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s 2.1 kg 36 mm 15 mm 2 90 kN 81 kN 108 kN 100 m/s2 ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 45Q2800 On-state ITAVM ITRMS ITSM I2t Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 5490 A 8625 A 75000 A 79000 A 28125 kA2s 25900 kA2s VT www.DataSheet4U.com VT0 Half sine wave, TC = 70°C tp tp tp tp IT IT Tj Tj Tj Tj = = = = = = 10 ms 8.3 ms 10 ms 8.3 ms 6000 A 3000 - 9000 A Tj = 125°C After surge: VD = VR = 0V On-state voltage Threshold voltage Slope resistance Holding current 1.29 V 0.86 V 0.070 mΩ 40-100 mA 20-75 mA Tj = 125°C rT IH = 25°C = 125°C =...